Istituto Nazionale di Fisica Nucleare

Sezione di Trieste

OLA

  
 
 

1A. Input stage

1B. Output stage

 

The development of integrated electronics is now an imperative for every detector system which includes silicon sensors; also for the silicon drift chamber (see DSI project) many solutions have been studied.

The integrated circuit OLA has been produced with bipolar technology. Specifically developed for the silicon drift chamber, this circuit - realized as a result of the collaboration among the INFN Sections which have joined the DSI project of Trieste (Bari, Bologna, Catania, Torino) - has a shaping time of 50 nanoseconds and provides a bipolar output.

About 15,000 channels of this electronics have been characterized in Trieste in the Laboratory of Eletronics and Detectors, and they are now in use on several experiments which employ silicon drift Detectors.

 
 
 

  2. A detail of the integrated circuit

 

 
 
 

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